Browsing by Subject "Ferromagnetic materials"
Now showing items 1-17 of 17
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Article
Characterization and magnetic properties of a "super stable" radical 1,3-diphenyl-7-trifluoromethyl-1,4-dihydro-1,2,4-benzotriazin-4-yl
(2011)1,3-Diphenyl-7-trifluoromethyl-1,4-dihydro-1,2,4-benzotriazin-4-yl (4), prepared in SSSShigh yield via the catalytic oxidation of the corresponding amidrazone 5 by using Pd/C (1.6 mol ss%) and 1,8-diazabicyclo[5.4.0]undec-7-ene ...
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Article
Coexistence of ferromagnetic and glassy behavior in semiconducting LaNi 0.2Co 0.8O 3
(2002)Systematic dc and ac magnetic susceptibility studies have been performed on single-phase LaNi 0.2Co 0.8O 3 powder samples. Evidence of hysteresis loops supports the existence of ferromagnetic correlations that lead to a ...
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Conference Object
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs
(Institute of Electrical and Electronics Engineers Inc., 2003)Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, ...
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Article
Electron spin filtering in ferromagnet/semiconductor heterostructures
(2003)Circularly polarized light was used to generate spin-polarized electrons at room temperature in ferromagnet (FM)/GaAs Schottky diode structures. A change in the helicity-dependent photocurrent was obtained when the ...
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Article
Ferromagnetic interactions in a 1d alternating linear chain of π-stacked 1,3-diphenyl-7-(thien-2-yl)-1,4-dihydro-1,2,4-benzotriazin-4-yl radicals
(2012)X-ray studies show that 1,3-diphenyl-7-(thien-2-yl)-1,4-dihydro-1,2,4- benzotriazin-4-yl (6) adopts a distorted, slipped π-stacked structure of centrosymmetric dimers with alternate short and long interplanar distances ...
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Conference Object
Highly efficient spin filtering of ballistic electrons in hybrid spin valve/semiconductor structures
(2004)The highly efficient spin filtering of ballistic electrons in hybrid spin valve/semiconductor (SC) structures was discussed. It was found that the photocurrent was dependent on the relative alignment of the light helicity ...
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Article
Indium oxide as a possible tunnel barrier in spintronic devices
(2005)We report the growth of ultra-thin indium oxide layers using the dc-magnetron sputtering method. We demonstrate that good quality tunnel barriers made of indium oxide can be routinely fabricated and employed in spintronic-related ...
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Article
Investigation of spin-polarized resonant tunneling through double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equations
(2003)The article discusses the investigation of spin-polarized resonant tunneling through double barrier magnetic tunnel junctions (DBMTJ) by the self-consistent solution of Poissons and Schrödingers equations using transfer ...
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Article
Magnetic and structural properties of stoichiometric thin Fe 3Si/GaAs(0 0 1) films
(2005)In this study, we report experimental results on the structural and magnetic properties of epitaxial Fe3Si films grown on GaAs(0 0 1) by co-evaporation. X-ray reflectivity shows that relatively smooth interfaces are obtained ...
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Article
Magnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser deposition
(2004)We have grown films of the half-metallic ferromagnet NiMnSb on single crystals of the narrow gap semiconductor InSb by pulsed laser deposition. NiMnSb is a possible candidate for spin injection applications. The film ...
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Article
A new class of ferromagnetically-coupled mixed valence vanadium(IV/V) polyoxometalates
(2003)Reaction of [VVIOCl2(thf)2] with a bidentate nitrogen-donor ligand (L: phen = 1,10-phenanthroline, 5-mephen = 5-methyl-1,10-phenanthroline, bipy = 2,2′-bipyridine, 5,5′-me2bipy = 5,5′-dimethyl-2,2′-bipy) in methyl alcohol, ...
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Article
Pulsed-laser deposition of NiMnSb thin films at moderate temperatures
(2002)Thin films of the half-Heusler alloy NiMnSb, which is predicted by band-structure calculations to be a half-metallic ferromagnet, were grown on various substrates (Si and InAs) using pulsed-laser deposition. The growth ...
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Article
Recent advances in spintronics. Half-metal ferromagnets: Their role in spintronics
(2004)A review of recent advances in spintronics is presented. We report the structural, magnetic, electrical and thermal properties of the ferromagnetic half-Heusler alloy NiMnSb grown by arcmelting. The bulk material is used ...
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Conference Object
Stoichiometry issues in pulsed laser deposition of the ferromagnetic alloy NiMnSb
(Affiliation: NIRDO, BucharestAffiliation: MADIREL, Univ. Provence Centre St. Charles, Marseille, FranceAffiliation: Natl. Inst. Res. Devmt. Mat. Phy., BucharestAffiliation: Foundation for Res. and Technology, HELLAS, Inst. Electron. Structure and Laser, Heraklion, Crete, GreeceCorrespondence Address: Grigorescu, C.E.A.NIRDO, Bucharest, 2002)We report on the reproducible growth of stoichiometric thin films of ferromagnetic intermetallic compound NiMnSb by pulsed laser deposition (PLD) on various substrates. The films are grown at moderate temperature (around ...
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Article
Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition
(2004)We report the growth of single-phase, stoichiometric polycrystalline thin films of the half-Heusler ferromagnet NiMnSb, predicted to be half-metallic, on single crystal InSb (100) substrates heated at 200°C by pulsed laser ...
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Article
Surface particularities in pulsed laser ablation/deposition of the ferromagnetic alloy NiMnSb
(2003)In this work we investigate the surface morphology and stoichiometry of the ablated targets employed with pulsed laser deposition (PLD) of thin films of the ferromagnetic half-Heusler alloy NiMnSb. The NiMnSb targets were: ...
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Article
Synthesis and physical properties of arc melted NiMnSb
(2004)The synthesis and physical properties of arc melted NiMnSb were studied using X-ray diffraction analysis. It was observed that the half metallicity in NiMnSb is supported by the integer saturation magnetization value at 5 ...